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TIM6472-30UL - MICROWAVE POWER GaAs FET

Features

  • ･BROAD BAND.

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MICROWAVE POWER GaAs FET TIM6472-30UL FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.4A f = 6.4 to 7.2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 28  MIN. 44.0 8.5    -44   TYP. MAX. 45.
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