TIM6472-30UL Datasheet | Toshiba

MICROWAVE POWER GaAs FET Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.4A f = 6.4 to 7.2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.0dBm, f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1dB) X...