TIM7179-45SL Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 6.5dB at 7.1GHz to 7.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.0A f = 7.1 to 7.9GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 35.5dBm, f=...