TJ200F04M3L
TJ200F04M3L is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Automotive
- DC-DC Converters
- Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TO-220SM(W)
1: Gate 2: Drain (heatsink) 3: Source
©2015-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2014-12
2020-06-24 Rev.8.0
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