Datasheet4U Logo Datasheet4U.com

TJ80S04M3L Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: TJ80S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ80S04M3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2.

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ene.

More Datasheets from Toshiba

Part Number Description

TJ80S04M3L Distributor