TK100A10N1 Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A10N1 1. Applications • Switching Voltage Regulators 2.

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit).

Brand Logo	Part Number	Description	Manufacturer
	TK100A10N1	N-Channel MOSFET	INCHANGE