Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS)
1. Applications
- Switching Voltage Regulators
- DC-DC Converters
- Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TO-220SM(W)
1: Gate 2: Drain (Heatsink) 3: Source
©2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2008-03
2020-06-12 Rev.2.0
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