TK110Z65Z
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 m A)
3. Packaging and Internal Circuit
TO-247-4L(T)
1. Drain (heatsink) 2. Source 1 3. Source 2 4. Gate
Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque
(Tc = 25 )
(Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD EAS IAS IDR IDRP Tch Tstg TOR
650 ±30 24 96 190 258
6 24 96 150 -55 to 150 0.8
V A W m J...
