Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
Switching Regulator Applications
Unit: mm z Low drain- source ON resistance
: RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance
: |Yfs| = 14 S (typ.) z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...