Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 0.22 Ω (typ.)
- High forward transfer admittance: |Yfs| = 8.5 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
20.0 ± 0.3
3.3 MAX.
20.5 ±...
