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TK20X60U - Field Effect Transistor

Key Features

  • hout limitation, equipment used in nuclear facilities, equipment used.

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Datasheet Details

Part number TK20X60U
Manufacturer Toshiba
File Size 212.56 KB
Description Field Effect Transistor
Datasheet download datasheet TK20X60U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20X60U Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.