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MOSFETs Silicon N-Channel MOS (DTMOS�)
TK210V65Z
1. Applications
• Switching Power Supplies
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)
3. Packaging and Internal Circuit
TK210V65Z
DFN8x8
1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink)
Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin.
4.
TK210V65Z Datasheet
