TK25N60X5 - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK25N60X5
Manufacturer	Toshiba
File Size	375.26 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK25N60X5 Datasheet
Additional preview pages of the TK25N60X5 datasheet.

(1) Fast reverse recovery time: trr = 120 ns(typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ. ) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25N60X5 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) P.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Nov 9, 2019 |