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TK25Z60X - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25Z60X TO-247-4L(T) 1. Drain (Heat sink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electron.

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Datasheet Details

Part number TK25Z60X
Manufacturer Toshiba
File Size 277.21 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK25Z60X Datasheet

Full PDF Text Transcription for TK25Z60X (Reference)

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MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25Z60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) ...

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Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25Z60X TO-247-4L(T) 1. Drain (Heat sink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-11 2017-12-06 Rev.4.0 TK25Z60X 4.

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