Click to expand full text
MOSFETs Silicon N-Channel MOS (DTMOS-H)
TK25Z60X
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)
3. Packaging and Internal Circuit
TK25Z60X
TO-247-4L(T)
1. Drain (Heat sink) 2. Source 1 3. Source 2 4. Gate
Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin.
©2016-2017 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-11
2017-12-06 Rev.4.0
TK25Z60X
4.
TK25Z60X Datasheet
