TK28A65W - N-Channel MOSFET

Product Overview

Toshiba

Part number	TK28A65W
Manufacturer	Toshiba
File Size	293.03 KB
Description	N-Channel MOSFET
Datasheet	TK28A65W Datasheet
Additional preview pages of the TK28A65W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28A65W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipat.

📁 Similar Datasheet

TK28A65W - N-Channel MOSFET (INCHANGE)
TK28E65W - N-Channel MOSFET (INCHANGE)
TK28N65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK28N65W - N-Channel MOSFET (INCHANGE)
TK28N65W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)

Other Datasheets by Toshiba

Published: Oct 4, 2020 |