Datasheet4U Logo Datasheet4U.com

TK31E60W Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS (DTMOS) TK31E60W 1. Applications • Switching Voltage Regulators 2.

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31E60W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo TK31E60W N-Channel MOSFET INCHANGE

More Datasheets from Toshiba

Part Number Description
TK31E60X Silicon N-Channel MOSFET
TK31A60W Silicon N-Channel MOSFET
TK31J60W Silicon N-Channel MOSFET
TK31N60W Silicon N-Channel MOSFET
TK31N60X Silicon N-Channel MOSFET
TK31V60W5 Silicon N-Channel MOSFET
TK31V60X Silicon N-Channel MOSFET
TK31Z60X Silicon N-Channel MOSFET
TK32A12N1 Silicon N-Channel MOSFET
TK32E12N1 Silicon N-Channel MOSFET

TK31E60W Distributor