TK380P65Y - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK380P65Y
Manufacturer	Toshiba
File Size	446.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK380P65Y Datasheet
Additional preview pages of the TK380P65Y datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.7.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jul 8, 2019 |