TK3P80E
Features
(1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain(Heatsink) 3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 2)
118 m J
Avalanche current
Reverse drain current (DC)
(Note 1)
Reverse drain current (pulsed)
(Note 1)
IDRP
Channel temperature
Tch...
