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TK3P80E - N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK3P80E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 3 A Drain.

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Datasheet Details

Part number TK3P80E
Manufacturer Toshiba
File Size 378.21 KB
Description N-Channel MOSFET
Datasheet download datasheet TK3P80E Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS (π-MOS) TK3P80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK3P80E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4.
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