TK3R2A10PL
Features
(1) High-speed switching (2) Small gate charge: QSW = 48 n C (typ.) (3) Small output charge: Qoss = 164 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
TO-220SIS
1: Gate 2: Drain 3: Source
©2017-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-01
2021-01-27 Rev.2.0
4. Absolute Maximum Ratings (Note) (Ta = 25
- unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque
(Tc = 25
- ) (Silicon limit) (t = 100 µs) (Tc = 25
- )
(t = 1.0 s)
(Note 1) (Note 1),...
