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TK4K1A60F Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS (π-MOS) TK4K1A60F 1. Applications • Switching Power Supplies 2.

Key Features

  • (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 3.38 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.19 mA) 3. Packaging and Internal Circuit TK4K1A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-puls.

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