TK4R3E06PL
TK4R3E06PL is Silicon N-channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-channel MOS (U-MOS- -H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
- Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TO-220
1: Gate 2: Drain (heatsink) 3: Source
©2016-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-10
2021-01-20 Rev.3.0
TK4R3E06P...
