TK560A60Y - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK560A60Y
Manufacturer	Toshiba
File Size	444.34 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK560A60Y Datasheet
Additional preview pages of the TK560A60Y datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power diss.

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Published: Jul 8, 2019 |