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TK5A60W5 - N-Channel MOSFET

Datasheet Summary

Features

  • (1) Fast reverse recovery time: trr = 65 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ. ) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.23 mA) 3. Packaging and Internal Circuit TK5A60W5 TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-12 2015-12-25 Rev.2.0 TK5A60W5 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise s.

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Datasheet Details

Part number TK5A60W5
Manufacturer Toshiba
File Size 536.03 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS (DTMOS) TK5A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 65 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.23 mA) 3. Packaging and Internal Circuit TK5A60W5 TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-12 2015-12-25 Rev.2.0 TK5A60W5 4.
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