Datasheet Summary
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 1.3 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 3.0 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of mercial production
2009-12
2015-03-06
Rev.1.0
4....
