Datasheet4U Logo Datasheet4U.com

TK5P60W5 - N-Channel MOSFET

Features

  • (1) Fast reverse recovery time: trr = 65 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.84 Ω (typ. ) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.23 mA) 3. Packaging and Internal Circuit TK5P60W5 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-s.

📥 Download Datasheet

Datasheet preview – TK5P60W5

📁 Similar Datasheet

  • TK5P60W5 - N-Channel MOSFET (INCHANGE)
  • TK5P60W - MOSFETs (Toshiba Semiconductor)
  • TK5P60W - N-Channel MOSFET (INCHANGE)
  • TK5P65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK5P65W - N-Channel MOSFET (INCHANGE)
  • TK5P50D - N-Channel MOSFET (INCHANGE)
  • TK5P53D - N-Channel MOSFET (INCHANGE)
  • TK5P53D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50A04K3 - MOSFETs (Toshiba Semiconductor)
  • TK50A04K3 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-Channel MOS (DTMOS) TK5P60W5 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Features (1) Fast reverse recovery time: trr = 65 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.84 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.23 mA) 3. Packaging and Internal Circuit TK5P60W5 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 4.
Published: |