TK6A80E
TK6A80E is N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)
3. Packaging and Internal Circuit
TO-220SIS
1: Gate 2: Drain 3: Source
Start of mercial production
2013-12
2014-03-04
Rev.3.0
4....
