The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK7A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7A65D
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Gate-source voltage Drain current DC (Note Pulse (Note 1) 1) ymbol VDSS VGSS ID IDP PD 2) EAS IAR 7 EAR 4.5 Tch 150 Tstg −55 to 150 Rating 650 V ±30 V 7 28 45 W 273 mJ A mJ °C °C A Unit
2.54 0.64 ± 0.15
15.0 ± 0.3
• • • •
Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.
TK7A65D Datasheet
