Silicon N Channel MOS Type Field Effect Transistor
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A50D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.
TK8A50D Datasheet
