TK8R2E06PL
TK8R2E06PL is Silicon N-channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-channel MOS (U-MOS- -H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
- Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 9.7 n C (typ.) (3) Small output charge: Qoss = 23 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 m A)
3. Packaging and Internal Circuit
TO-220
1: Gate 2: Drain (heatsink) 3: Source
©2016-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-10
2021-02-02 Rev.3.0
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