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TK9J90E - N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9J90E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.4.0 TK9J90E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source vo.

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Datasheet Details

Part number TK9J90E
Manufacturer Toshiba
File Size 225.59 KB
Description N-Channel MOSFET
Datasheet download datasheet TK9J90E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9J90E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.4.0 TK9J90E 4.