TLN233 Datasheet | Toshiba

TOSHIBA Infrared LED Ga AℓAs Infrared Emitter Infrared LED for Space-Optical-Transmission Unit: mm High radiant intensity: 80 m W/sr (typ.) at IF = 50 m A Half-angle value: θ1/2 = ±13° (typ.) A light source for remote control Wireless AV-signal transmission purpose High speed data transmission purpose - - - - - Maximum Ratings (Ta = 25°C) Characteristics Forward current Pulse forward current Power dissipation Reverse voltage Operating temperature range Storage temperature range Soldering temperature (5 s), (Note 2) Symbol IF IFP PD VR Topr Tstg Tsol Rating 100 1000 (Note 1) 200 4 -25~85 -30~100 260 Unit m A m A m W V °C °C °C JEDEC JEITA TOSHIBA ― ― 4-5V3 Note 1: f = 100 k Hz, duty = 1% Note 2: Soldering must be performed under the stopper. Pin Connection 1 2 1. Anode 2. Cathode 2002-01-17 Optical and Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Reverse current Radiant intensity Radiant power Cut-off frequency Peak emission wavelength Half-angle value Symbol VF IR IE PO fc l P 1 q 2 Test Condition IF = 100 m A VR = 4 V IF = 50 m A IF = 50 m A IF = 50 m A + 5 m AP-P IF = 50 m A IF = 50 m A (Note 3) Min ¾ ¾ 46 ¾ ¾ ¾ ¾ Typ. 1.6 ¾ 80 30 15 870 ±13 Max 2.0 60 ¾ ¾ ¾ ¾ ¾ Unit V m A m W/sr m W MHz nm ° Note 3: Frequency when modulation light power decreases by 3d B from 1 MHz. Handling Precautions - - - Soldering must be performed under the stopper. When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the leads have been formed. The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits, the device must take into account the change in radiant intensity over time. The change in radiant intensity is equal to the reciprocal of the change in LED infrared optical output. IE (t) P o (t) = IE (0) P o (0) 2002-01-17 - Ta 120 100 75°C 100 -...