TLP250F-INV Datasheet | Toshiba

TOSHIBA Photocoupler IRED & Photo-IC TLP250F(INV) TLP250F(INV) Transistor Inverter Inverters for Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250F(INV) consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP. TLP250F(INV) is suitable for gate driving circuit of IGBT or power MOS FET. - Input Threshold Current : IF=5m A(max) - Supply Current : 11m A(max) - Supply Voltage : 10 to 35V - Output Current : ±1.5A(max) - Switching Time(tp LH/tp HL) : 0.5μs(max) - Isolation Voltage : 2500Vrms(min) - UL-recognized : UL 1577,File No.E67349 - c UL-recognized : CSA ponent Acceptance Service No.5A File No.E67349 - VDE-Approved : EN 60747-5-5 (Note 1) Unit : mm TOSHIBA 11- 10C402S Weight: 0.54 g (typ.) Note 1:When a VDE approved type is needed, please designate the Option(D4). - Creepage Distance Clearance Truth Table : 8.0mm(min) :...