TLP291-SE Datasheet | Toshiba

Photocouplers Infrared LED & Photo Transistor TLP291(SE TLP291(SE 1. Applications - Switching Power Supplies - Programmable Logic Controllers (PLCs) - I/O Interface Boards 2. General TLP291(SE consists of photo transistor optically coupled to an infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler. Since TLP291(SE is guaranteed wide operating temperature (Ta = -55 to 110 ) and high isolation voltage (3750 Vrms), it's suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 110  (5) Safety standards UL-recognized: UL 1577, File No.E67349 c UL-recognized: CSA ponent Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4). 4. Packaging and Pin Assignment 11-3C1 ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1: Anode 2: Cathode 3: Emitter 4: Collector Start of mercial production 2012-02 2019-07-08 Rev.2.0 5. Mechanical Parameters TLP291(SE Characteristics Creepage distances Clearance Internal isolation thickness Min Unit 5.0 mm 6....