Datasheet4U Logo Datasheet4U.com

TLP351AF - Photocouplers

Download the TLP351AF datasheet PDF. This datasheet also covers the TLP351A variant, as both devices belong to the same photocouplers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • (1) Output peak current: ±0.6 A (max) (2) Operating temperature: -40 to 100  (3) Supply current: 2 mA (max) (4) Supply voltage: 10 to 30 V (5) Threshold input current: 5 mA (max) (6) Propagation delay time: 500 ns (max) (7) Common-mode transient immunity: ±20 kV/µs (min) (8) Isolation voltage: 3750 Vrms (min) (9) Safety sta.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TLP351A-Toshiba.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TLP351 Photocoupler Toshiba Semiconductor
TLP350 Photocouplers Toshiba Semiconductor
TLP3502 Photocoupler Toshiba Semiconductor
TLP3502A Photocoupler Toshiba Semiconductor
TLP3503 Photocoupler Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TLP351A Photocouplers
TLP351F Photocouplers
TLP351H Photocouplers
TLP351HF Photocouplers
TLP350F Photocouplers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Photocouplers GaAℓAs Infrared LED & Photo IC TLP351A,TLP351AF TLP351A,TLP351AF 1. Applications • Industrial Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP351A is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. The TLP351A has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µs. It has a totem-pole output that can both sink and source current. The TLP351A is ideal for IGBT and power MOSFET gate drive. 3. Features (1) Output peak current: ±0.