TLP358 Datasheet | Toshiba

Photocouplers Ga AℓAs Infrared LED & Photo IC 1. Applications - Industrial Inverters - MOSFET Gate Drivers - IGBT Gate Drivers - Induction Cooktop and Home Appliances 2. General The TLP358 is a photocoupler in a DIP8 package that consists of a Ga AℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It has an internal Faraday shield that provides a guaranteed mon-mode transient immunity of ±20 k V/µs. The TLP358 is ideal for IGBT and power MOSFET gate drive. 3. Features (1) Buffer logic type (totem pole output) (2) Output peak current: ±6.0 A (max) (3) Operating temperature: -40 to 100  (4) Supply current: 2 m A (max) (5) Supply voltage: 15 to 30 V (6) Threshold input current: 5 m A (max) (7) Propagation delay time: 500 ns (max) (8) mon-mode transient immunity: ±20 k V/µs (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 c UL-approved: CSA ponent Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (D4). ©2016 Toshiba Corporation Start of mercial production 2009-06 2016-01-19 Rev.4.0 4. Packaging and Pin Configuration 11-10C4S 5. Internal Circuit (Note) 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: N.C. 7: VO(Output) 8: VCC Note: A 1.0-µF bypass capacitor must be connected between pin 8 and pin 5. 6. Principle of Operation 6.1. Truth Table Input H L LED ON OFF M1 ON OFF M2 OFF ON Output H L 6.2. Mechanical Parameters Characteristics Creepage distances Clearance distances Internal isolation thickness 7.62 mm Pitch TLP358 7.0 (min) 7.0 (min) 0.4...