TMM2015BP-10 Datasheet | Toshiba

TOSHIBA MOS MEMORY PRODUCTS 2,048 WORD X 8 BIT STATIC RAM TMM2015BP-90, TMM2015BP-12 SILICON MONOLITHIC TMM2015BP-10, TMM2015BP-15N-CHANNEL SILICON GATE MOS PROCESS DESCRIPTION The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power Features with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode in which maximum standby current is 5mA. Thus the TMM201 nBP IS most sUitable for use In...