Download the TMM2018AD-25 datasheet PDF.
This datasheet also covers the TMM2018AD variant, as both devices belong to the same static ram family and are provided as variant models within a single manufacturer datasheet.
Key Features
with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed storage. The ~12018AD is offered in a 24 pin standard cerdip package with 0.3 inch width for high density assembly. The T}~12018AD is fabricated with ion implanted N channel silicon gate MOS technology fo.
Full PDF Text Transcription for TMM2018AD-25 (Reference)
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TMM2018AD-25. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA MOS MEMORY PRODUCT 2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS TMM2018AO-25, TMM2018AO-35 TMM2018AO-45 IOESCRI PTI ONI T...
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MOS PROCESS TMM2018AO-25, TMM2018AO-35 TMM2018AO-45 IOESCRI PTI ONI The TMM2018AD is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed storage. The ~1
TMM2018AD-25 Datasheet
