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TMM27128ADI - UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Description

TheTMM27128ADI isa 16,384 word x 8 bit ultraviolet light erasable and electrically programmable read only memory.

Features

  • Vee tAee 1eC2 leel -15 150ns I 5V±5% I 100mA 30mA -20 200ns.
  • Wide operating temparature range -40-85'C.
  • Full static operation.
  • High speed programming mode.
  • Single location progra.

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Datasheet Details

Part number TMM27128ADI
Manufacturer Toshiba
File Size 335.40 KB
Description UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet download datasheet TMM27128ADI Datasheet
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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 16,3B4 WORD X B BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY N·CHANNEL SILICON STACKED GATE MOS TMM27128ADI-15 TMM27128ADI-20 DESCRIPTION TheTMM27128ADI isa 16,384 word x 8 bit ultraviolet light erasable and electrically programmable read only memory. For read operation, the TM M 27128ADI's access time is 150ns/200ns, and the TMM2 7128ADI operates from a single 5-volt power supply and has a low power standby mode which reduces the power dissipation without increasing access time. The standby mode is achieved by applying a TILhigh level signal to the CE input. For program operation, the program is achieved by using the high speed programming mode. The TMM2 7128ADI is fabricated with the Nchannel silicon double layer gate MOS technolgy.
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