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TMM27256ADI - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Description

The TMM27256ADI is a 32,768 word x 8 bit ultraviolet light erasable and electrically program

mabie read only memory.

Features

  • Vee tAee 1eC2 lee 1 -15 150ns I 5V±5% I 100mA 30mA '- -20 200ns.
  • Wide operating temparature range -40-85°C.
  • Full static operation.
  • High speed programming mode.
  • Inputs and outp.

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Datasheet preview – TMM27256ADI

Datasheet Details

Part number TMM27256ADI
Manufacturer Toshiba
File Size 306.51 KB
Description N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet download datasheet TMM27256ADI Datasheet
Additional preview pages of the TMM27256ADI datasheet.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT N·MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY SILICON STACKED GATE MOS TMM27256ADI-15 TMM27256ADI-20 DESCRIPTION The TMM27256ADI is a 32,768 word x 8 bit ultraviolet light erasable and electrically program· mabie read only memory. For read operation, The TMM27256ADI's access time is 150ns/200ns, and the TMM27256ADI operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing access time. The standby mode is achieved by applying a TIL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed programming mode. The TMM27256ADI is fabricated with the N-channel silicon double layer gate MaS technology.
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