TMM2764ADI-20 Datasheet PDF (UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY)

TMM2764ADI-20 - UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

This page provides the datasheet information for the TMM2764ADI-20, a member of the TMM2764ADI UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY family.

Description

The TMM2764AOI is a 8192 word x 8bit ultraviolet light erasable and electrically programmable read only memory.

Features

I-15 -20 Vee 5V±5% ItAee 150ns 200ns lee2 100mA Icel 30mA The standby mode is achieved by applying a TILhigh level signal to the CE input. For program operation, the programming is achieved by using the high speed programming mode. The TMM2764AOI is fabricated with the Nchannel silicon double layer gate MaS technology.
Wide operating temparature range -40-85"C.
Fully static operation.
High speed programming mode.
Single location programming.

Datasheet Details

Part number	TMM2764ADI-20
Manufacturer	Toshiba
File Size	337.63 KB
Description	UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet	TMM2764ADI-20 Datasheet
Additional preview pages of the TMM2764ADI-20 datasheet.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 8,192 WORD X 8 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY TMM2764ADI-15 TMM2764ADI-20 DESCRIPTION The TMM2764AOI is a 8192 word x 8bit ultraviolet light erasable and electrically programmable read only memory. For read operation, the TMM2764AO's access time is 150/200ns and the TMM2764AOI operates from a single 5-volt power supply and has a low power standby mode which reduces the power dissipation without increasing access time. FEATURES I-15 -20 Vee 5V±5% ItAee 150ns 200ns lee2 100mA Icel 30mA The standby mode is achieved by applying a TILhigh level signal to the CE input. For program operation, the programming is achieved by using the high speed programming mode.

Published: Jan 20, 2017 |