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TMM41256T-15 Datasheet Dram

Manufacturer: Toshiba

Overview: TOSHIBA MOS MEMORY PRODUCT 262,144 WORD X 1 BIT DYNAMIC RAM N-CHANNEL SILICON GATE MOS TMM41256P/T-12.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The TMM41256P/T is the new generation dynamic RAM organized 262,144 words by 1 bit, it is successor to the industry standard TMM4164AP.

The TMM41256P/T utilizes TOSHI BA's N-channel Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Multiplexed address inputs permit the TMM- 41256P IT to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carner.

Key Features

  • include sing Ie power supply of 5V ± 10% tolerance, direct interfacing capability with high perforrna nce logic families such as Schottky TTL.

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