Datasheet4U Logo Datasheet4U.com

TMM41257P-12 - N-channel dynamic RAM

This page provides the datasheet information for the TMM41257P-12, a member of the TMM41257 N-channel dynamic RAM family.

Description

The TMM41257P/T is the N-channel dynamic RAM organized 262,144 words by 1 bit.

Multiplexed address inputs permit the TMM41257P/T to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carrier.

Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as schottky TTl. In addition to the RAS only refresh mode, a CAS before RAS automatic refresh is available. Another special feature of TMM41257P/T is nibble mode, allowi.

📥 Download Datasheet

Datasheet preview – TMM41257P-12

📁 Similar Datasheet

Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA MOS MEMORY PRODUCT 262,144 WORD X 1 BIT DYNAMIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS TMM41257P/T-12 TMM41257P/T-15 DESCRIPTION The TMM41257P/T is the N-channel dynamic RAM organized 262,144 words by 1 bit. Multiplexed address inputs permit the TMM41257P/T to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carrier. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. The double layered MOS technology with polycide and poly Si permits the TMM41257P/T high speed operation. Also, the advanced circuit techniques have realized low power dissipation.
Published: |