Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
- Small footprint due to small and thin package
- Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.)
- Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 30 V)
- Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
-...
