Toshiba TPC8201
N-Channel MOSFET
| Part No. | TPC8201 |
|---|---|
| Datasheet | TPC8201 Download |
| Manufacturer |  Toshiba |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
Portable EquipmentAPPLICATIONS
Notebook PCs l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)MAXIMUM RATINGS
(Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature...
