Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
0.05 M A
6.0 ± 0.3 5.0 ± 0.2
- Small footprint due to a small and thin package
- Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.)
- High forward transfer admittance: |Yfs| =94 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.15 ± 0.05
5.0 ± 0.2
0.166 ± 0.05
0.95 ± 0.05
1.1 ±...