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TPCC8093 Datasheet Field Effect Transistor

Manufacturer: Toshiba

Overview: TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8093 1. Applications • Lithium-Ion Secondary Batteries 2.

Key Features

  • (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cu.

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TPCC8093 Distributor