Datasheet4U Logo Datasheet4U.com

TPCC8093 - Field Effect Transistor

Features

  • (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cu.

📥 Download Datasheet

Datasheet Details

Part number TPCC8093
Manufacturer Toshiba
File Size 253.41 KB
Description Field Effect Transistor
Datasheet download datasheet TPCC8093 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPCC8001-H Field Effect Transistor Toshiba Semiconductor
TPCC8002-H Silicon N-Channel MOSFET Toshiba Semiconductor
TPCC8003-H Field Effect Transistor Toshiba Semiconductor
TPCC8005-H Silicon N-Channel MOSFET Toshiba Semiconductor
TPCC8006-H Field Effect Transistor Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TPCC8061-H Field Effect Transistor
TPCC8062-H MOSFETs
TPCC8064-H MOSFETs
TPCC8065-H Field Effect Transistor
TPCC8066-H MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8093 1. Applications • Lithium-Ion Secondary Batteries 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Published: |