Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Power Management Switches
2. Features
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4....