Datasheet4U Logo Datasheet4U.com

TPCC8136 - Silicon P-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8136 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate.

📥 Download Datasheet

Datasheet Details

Part number TPCC8136
Manufacturer Toshiba
File Size 231.36 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCC8136 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPCC8131 Silicon P-Channel MOSFET Toshiba Semiconductor
TPCC8137 Silicon P-Channel MOSFET Toshiba Semiconductor
TPCC8102 Field Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor
TPCC8103 Noteboook PC Applications Portable Eqipment Applications Toshiba Semiconductor
TPCC8104 Silicon P-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TPCC8138 Silicon P-Channel MOSFET
TPCC8061-H Field Effect Transistor
TPCC8062-H MOSFETs
TPCC8064-H MOSFETs
TPCC8065-H Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8136 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8136 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.