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TPD7211F - Power MOSFET Gate Driver

Description

Pin No.

Input pin for high-side output (OUT1) control.

The IN1 pin has an internal pull-down resistor.

Features

  • z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) IN1 1 STBY 2 IN2 3 8 OUT1 7 VDD 6 N. C Marking SON8-P-0303-0.65 Weight: 0.017g (typ. ) Part No. (or abbreviation code) 7211F Lot No. GND 4 （TOP VIEW） 5 OUT2.
  • on the lower left of the marking indicates Pin 1.
  • Weekly code: (Three digits) Week of manufacture (01 for fi.

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Datasheet Details

Part number TPD7211F
Manufacturer Toshiba
File Size 247.68 KB
Description Power MOSFET Gate Driver
Datasheet download datasheet TPD7211F Datasheet
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Full PDF Text Transcription

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TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) IN1 1 STBY 2 IN2 3 8 OUT1 7 VDD 6 N.C Marking SON8-P-0303-0.65 Weight: 0.017g (typ.) Part No. (or abbreviation code) 7211F Lot No.
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