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TPH12008NH - Silicon N-Channel MOSFET

Key Features

  • (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.1 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH12008NH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2022-08-.

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Datasheet Details

Part number TPH12008NH
Manufacturer Toshiba
File Size 294.91 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPH12008NH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TPH12008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH12008NH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2022-08-19 Rev.3.0 TPH12008NH 4.