TPH12008NH - Silicon N-Channel MOSFET

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Toshiba

Part number	TPH12008NH
Manufacturer	Toshiba
File Size	294.91 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPH12008NH Datasheet
Additional preview pages of the TPH12008NH datasheet.

(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.1 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH12008NH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2022-08-.

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Published: Sep 2, 2014 |