TPH1400ANH - Field Effect Transistor

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Toshiba

Part number	TPH1400ANH
Manufacturer	Toshiba
File Size	263.30 KB
Description	Field Effect Transistor
Datasheet	TPH1400ANH Datasheet
Additional preview pages of the TPH1400ANH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 11.3 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-05-10 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TPH1400ANH 4. Absolute Maximum Ratings (Note) (Ta =.

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Published: Nov 11, 2013 |