Datasheet4U Logo Datasheet4U.com

TPH1400ANH - Field Effect Transistor

Key Features

  • (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 11.3 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-05-10 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TPH1400ANH 4. Absolute Maximum Ratings (Note) (Ta =.

📥 Download Datasheet

Datasheet Details

Part number TPH1400ANH
Manufacturer Toshiba
File Size 263.30 KB
Description Field Effect Transistor
Datasheet download datasheet TPH1400ANH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPH1400ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1400ANH 1. Applications • • • DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-05-10 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TPH1400ANH 4.