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TPH6R003NL - MOSFET

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Features

  • (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.3 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curre.

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Datasheet Details

Part number TPH6R003NL
Manufacturer Toshiba
File Size 231.98 KB
Description MOSFET
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TPH6R003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPH6R003NL 1. Applications • • Switching Voltage Regulators DC-DC Converters 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
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